Ecosystems Technology and Design for Nanoelectronics

Dr. Thierry Baron obtained his MSc in Applied Physics from Grenoble University in 1992. In 1996, he received his PhD in physics from Grenoble University, working on the solid source molecular beam epitaxy of II-VI compounds for optical purposes. In 1997, he spent two years in Würzburg University, Germany, to study the elaboration and characterization of semiconductors laser devices. He joined CNRS in 1998 working in close collaboration with the technological platform of LETI, Grenoble. He has studied the elaboration of Si quantum dots and single electron effects in nanoparticles by local probe techniques. These nanoparticles have been integrated in memory devices. His current research is dedicated to the organisation of nanostructures, the growth of Si, Ge nanowires by CVD, and the study of their physical properties. He has been author or co-author of over 108 articles in International Refereed Journals, and more than 12 patents.