ICT-2010-257964
Presenter: Max Lemme, | Discussion on Graphene |
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MAX LEMME, KTH Royal Institute of Technology, Stockholm Max Lemme received his Dipl.Ing. and Dr.-Ing. degree in Electrical Engineering from RWTH Aachen University in 1998 and 2003. In 1998 he joined nanotechnology start-up AMO GmbH, where he later became Head of the Technology Department. He has worked on non-conventional nano-CMOS devices, including nanowire MOSFETs, novel high-k materials for gate stacks and, since 2005, graphene. Highlights include the world’s first top-gated graphene MOSFET and a novel graphene-based nonvolatile memory. In 2006 he received a young researchers’ award “NanoFutur” in Germany and in 2007 he received a Lynen Research Fellowship from the Alexander von Humboldt Foundation. In 2008 he joined Harvard University in Cambridge, USA, where he pioneered a helium ion-based nanolithography method for graphene and investigated graphene photodetectors. In September 2010, he became Professor at KTH, where he is leading the graphene activities within the School of Information and Communication Technology. He is Senior Member of IEEE. |