Bio and Interests:
Rupendra Kumar Sharma was born in Bulandshahr, India, in 1984. He received the M.Sc. degree in physics from the Chaudhary Charan Singh University, Meerut, India and Ph.D. degree in electronics from the Department of Electronic Science, University of Delhi, India. His Ph.D thesis is on the modeling, simulation and characterization of gate misalignment effect in DG MOSFETs.
He was a Postdoctoral Researcher with the Advanced Research Center for Electronic Systems (ARCES) and Department of Electronics (DEIS) University of Bologna, 40136 Bologna, Italy, where he was involved in numerical optimization and characterization of a dual N/P channel super-junction LDMOS for low dropout voltage regulator (LDO) applications. Currently, he is working as a Postdoctoral Researcher with the Telecommunication Systems Institute; Technical University of Crete, Greece in a European Funding Research Program Compact Modeling Network (“COMON”) on compact modeling of Nanoscale Multi-gate MOSFETs and of High-Voltage MOSFETs. He has authored or coauthored numerous scientific papers.